CJPF04N80 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 800V N-Channel Power MOSFET RDS(on)MAX 3.0Ω@10V 4A TO-220F GENERAL DESCRIPTION This is a N-channel mode power MOSFET using advanced technology to provide planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode. It is universally applied in high efficiency switch mode power supply. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Avalanche Energy Specified z High Switching Speed 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJPF04N80= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG .cj-elec. Value 800 ±30 4.0 16 170 62.5 150 -55 ~+150 Unit V A m J ℃/W ℃ B,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics...