Datasheet Details
| Part number | CJQ4406 |
|---|---|
| Manufacturer | JCET |
| File Size | 891.39 KB |
| Description | N-Channel Power MOSFET |
| Download | CJQ4406 Download (PDF) |
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| Part number | CJQ4406 |
|---|---|
| Manufacturer | JCET |
| File Size | 891.39 KB |
| Description | N-Channel Power MOSFET |
| Download | CJQ4406 Download (PDF) |
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|
|
The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and general purpose applications.
APPLICATIONS z High side switch in SMPS z Load Switch MARKING Q4406= Device code Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device YY=Date Code Front side MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) (1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C Equivalent Circuit D D D D 8 7 6 5 1 2 3 4 S S S G Symbol VDS VGS ID IDM EAS(1) PD RθJA TJ Tstg TL Limit 30 ±20 10 40 105 1.4 89 150 -55 ~+150 260 www.cj-elec.com 1 Unit V V A A mJ W ℃/W ℃ ℃ ℃ A-3,Feb,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test Condition Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current On characteristics (note1) V(BR) DSS VGS = 0V, ID =250µA IDSS VDS =30V, VGS =0V IGSS VDS =0V, VGS =±20V Gate-threshold voltage Static drain-source on-sate resistance Forward transconductance Dynamic characteristics (note 2) VGS(th) RDS(on) gFS VDS =VGS, ID =250µA VGS =10V, ID =12A VGS =4.5V, ID =10A VDS =5V, ID =10A Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics (note 2) Ciss Coss Crss VDS =15V,VGS =0V, f =1MHz Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise tim
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4406 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 12mΩ@10V 30 V 10A 16mΩ@4.
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