CJQ4406 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4406 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 12mΩ@10V 30 V 10A 16mΩ@4.5V SOP8 DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLICATIONS z High side switch in SMPS z Load Switch MARKING Q4406= Device code Solid dot=Pin1 indicator Solid dot = Green molding pound device, if none, the normal device YY=Date Code Front side MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) (1).EAS condition: VDD=50V,L=0.5m H, RG=25Ω, Starting TJ = 25°C Equivalent Circuit Symbol VDS VGS ID IDM EAS(1) PD RθJA TJ Tstg TL Limit 30 ±20 10 40 105 1.4 89 150 -55 ~+150 260 .cj-elec. Unit V V A A m J W ℃/W ℃ ℃ ℃ A-3,Feb,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test...