CJQ4459 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS V(BR)DSS -30V P-Channel Power MOSFET RDS(on)MAX 46mΩ@ -10V 72mΩ@ -4.5V   -6.5A   SOP8 DESCRIPTION The CJQ4459 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications APPLICATIONS z Battery Switch z Load Switch MARKING Front side Q4459= Device code Solid dot=Pin1 indicator Solid dot = Green molding pound device, if none, the normal device YY=Date Code Equivalent Circuit D DDD 8765 12 3 4 S SSG MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for...