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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS2010 Dual N-channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
9.5mΩ@4.5V
10mΩ@4V
20V
10.5mΩ@3.5V
10A
11.5mΩ@3.1V
13mΩ@2.5V
FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package
MARKING
S2010 YY
S2010 YY
S2010= Device code , YY=Date Code
Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none,the normal device.
CJS2010 Datasheet
