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CJU04N60 - N-Channel Power MOSFET

General Description

high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode wigh fast recovery time.

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Datasheet Details

Part number CJU04N60
Manufacturer JCET
File Size 736.24 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU04N60 Datasheet

Full PDF Text Transcription for CJU04N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJU04N60. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET General Description This advanced high volta...

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0V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-252-2L 1. GATE 2. DRAIN 3.

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