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CJU04N60A - N-Channel Power MOSFET

General Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet Details

Part number CJU04N60A
Manufacturer JCET
File Size 825.40 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU04N60A Datasheet

Full PDF Text Transcription for CJU04N60A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CJU04N60A. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX 3Ω@10V ID 4A GENERA...

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0A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX 3Ω@10V ID 4A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-252-2L(4R) 1. GATE 2. DRAIN 3.

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