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CJU18P10 - P-Channel Power MOSFET

Datasheet Summary

Description

The CJU18P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

VDS =-100V,ID =-18A RDS(on)

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Datasheet Details

Part number CJU18P10
Manufacturer JCET
File Size 796.72 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CJU18P10 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU18P10 P-Channel Power MOSFET V(BR)DSS -100V RDS(on)MAX  100mΩ@-10V ID -18A   TO-252-2L GENERAL DESCRIPTION The CJU18P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. 1. GATE 2. DRAIN 3.
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