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CJU50N03 - N-Channel Power MOSFET

Description

to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

1.

Features

  • z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability.

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Datasheet preview – CJU50N03

Datasheet Details

Part number CJU50N03
Manufacturer JCET
File Size 1.20 MB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU50N03 Datasheet
Additional preview pages of the CJU50N03 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX   11mΩ@10V  16mΩ@5V   ID 50A DESCRIPTION The CJU50N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-252-2L 1. GATE 2. DRAIN 3.
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