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CJU50N06 - N-Channel Power MOSFET

Description

provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

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Datasheet Details

Part number CJU50N06
Manufacturer JCET
File Size 438.64 KB
Description N-Channel Power MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU50N06 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply TO-252-2L 1. GATE 2. DRAIN 3.
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