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CJU75N06 - N-Channel Power MOSFET

Description

The CJU75N06 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

1.

VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Good stability and uni

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Datasheet Details

Part number CJU75N06
Manufacturer JCET
File Size 791.51 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CJU75N06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU75N06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 60V 11.5mΩ@10V   75A   GENERAL DESCRIPTION The CJU75N06 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE FEATURE  VDS =60V,ID =75A  RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.
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