CJW1012 Datasheet | JCET

DESCRIPTION This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). SOT-323 1. GATE 2. SOURCE 3. DRAIN 3 2 FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z ESD protected MARKING APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to...