CJW1012 Datasheet | LGE

FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z ESD protected up to 2k V SOT-323 APPLICATIONS z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers Dimensions in inches and (millimeters) Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed(note1) Power Dissipation (note 2 , Ta=25℃) Maximum Power Dissipation (note 3 , Tc=25℃) Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case Storage Temperature Junction Temperature Symbol VDSS VGS ID(DC) IDM(pulse) RθJA RθJC Tj Tstg Value 20 ±12 500 1000 150 275 833 455 150 -55 ~+150 Unit V m A m W ℃/W ℃ http://.luguang.cn Email:lge@luguang.cn Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA Gate-Body Leakage Current IGSS VDS =0V, VGS =±4.5V Zero Gate Voltage Drain Current IDSS VDS =16V, VGS =0V Drain-Source On-State Resistance RDS(on) VGS =4.5V, ID =600m A VGS =2.5V, ID =500m A Forward Transconductance g FS VDS =10V, ID =400m A Dynamic Characteristics Input Capacitance (note 4) Ciss Output Capacitance (note 4) Coss VDS =16V,VGS =0V,f =1MHz Reverse Transfer Capacitance (note...