JCET EMH3
Digital Transistors
FEATURES
z Two DTC143T chips in a UMT package z Transistor elements are independent, eliminating interference z Mounting cost and area can be cut in half SOT-563 1 MARKING:H3 Absolute maximum ratings(Ta=25℃) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC Tj Tstg Electrical characteristics (Ta=25℃) Limits 50 50 5 100 150 150 -55~150 Unit V V V mA mW ℃ ℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT Mi