SeCoS Halbleitertechnologie GmbH EMH3
Dual NPN Digital Transistors
FEATURES
Two DTC143T chips in a UMT package. The elements of transistors are independent without interference. With this package, the mounting cost and space can be cut into half. B EQUIVALENT CIRCUIT C SOT-563 A J D F GH E MARKING H3 PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch REF. A B C D E Millimeter Min. Max. 1.50 1.50 1.70 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30ABSOLUTE MAXIMUM RATINGS
(TA=25°C) Parameter Symbol Collector-Base Voltage V(BR)CBO Collector-Emitter Voltage Emitter-Base Voltage V(BR)CEO V(BR)EBO Collector Current IC Collector Power Dissipation PC Junction and Storage Temperature TJ, TSTG Value 50 50 5 100 150 150, -55~150 Unit V V V mA mW °CABSOLUTE MAXIMUM RATINGS
ANDELECTRICAL CHARACTERISTICS
(TA=25°C) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 50 - - IC=50µA, IE=0 V - IC=1mA, IB=0 E...