IRFB830 Datasheet PDF

FEATURES

. Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement TO-263 1. G 2. D 3. S 123

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter ID @TC=25℃ ID @TC=100℃ IDM Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1) PD Power Dissipation RθJA VGS Thermal Resistance from Junction to Ambient Gate-Souse Voltage EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1) EAR Repetitive Avalanche Energy (note 1) dv/dt Peak Diode Recovery dv/dt (note 3) TJ Junction Temperature Tstg Storage Temperature Value 4.5 2.9 18 2 62.5 ±20 280 4.5 7.4 3.5 150 -55~+150 Units A A A W ℃/W V mJ A mJ V/ns ℃ ℃ A,Dec,2010

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions