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RB706F-40 - Schottky barrier Diode

Key Features

  • z Small package z Low VF and low IR z High reliability MAKING: 3J.
  • 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature Storage temperature Solid dot = Green molding compound device,if none, the normal device. Symbol VRM VR IO IFSM PD RθJA Tj Tstg Limit 45 40 30 200 200 500 125 -55+150 Unit V V mA mA mW ℃/W ℃.

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Datasheet Details

Part number RB706F-40
Manufacturer JCET
File Size 609.39 KB
Description Schottky barrier Diode
Datasheet download datasheet RB706F-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier Diode FEATURES z Small package z Low VF and low IR z High reliability MAKING: 3J· 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature Storage temperature Solid dot = Green molding compound device,if none, the normal device. Symbol VRM VR IO IFSM PD RθJA Tj Tstg Limit 45 40 30 200 200 500 125 -55+150 Unit V V mA mA mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Forward voltage Reverse current Capacitance between terminals VF IR CT 0.37 V 1 μA 2 pF www.