Datasheet4U Logo Datasheet4U.com

RB706F-40 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Key Features

  • High reliability.
  • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Bre.

📥 Download Datasheet

Datasheet Details

Part number RB706F-40
Manufacturer SEMTECH
File Size 214.24 KB
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB706F-40 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RB706F-40 Schottky Barrier Diodes LGE
RB706F-40 Schottky Barrier Diode Taiwan Semiconductor
RB706F-40 Schottky barrier Diode JCET
RB706F-40 Schottky barrier diode Rohm
RB706F-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP

Other Datasheets by SEMTECH

Part Number Description
RB715W Schottky Barrier Diode
RB751CS-40 Silicon Epitaxial Planar Schottky Barrier Diode
RB751S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification Features • High reliability • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol Min. Typ. Max. Unit VF - - 0.37 V IR - - 1 µA V(BR)R CT 45 - 2 -V - pF SEMTECH ELECTRONICS LTD.