Semtech Corporation RB706F-40
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
| Part No. | RB706F-40 |
|---|---|
| Datasheet | RB706F-40 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● High reliability● Low reverse current 3 12 Marking Code: ZA
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol Min. Typ. Max. Unit VF - - 0.37 V IR - - 1 µA V(BR)R CT 45 - 2 -V - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009 RB706F-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2009