JCET RB751G-40
Schottky barrier Diode
RB751G-40 Specifications
- Max Output Current : 30mA
- Terminals : 2
- Reverse Standoff Voltage : 40V
- Forward Voltage : 370mV
- Max Forward Surge : 200mA
- Max Operating Temp : 125°C
Source:
Octopart
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability MARKING: 5 SOD-723 - The marking bar indicates the cathodeMAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
, Single Diode @Ta=25℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage VR Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.3ms Power dissipation Thermal Resistance Junction to Ambient Junction temperature IO IFSM PD RθJA Tj Storage temperature Tstg Limit 40 30 30 200 150 667 125 -55~+150 Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Min Typ Max Unit 0.37 V 0.5 μA 2 pF Unit V V mA mA mW ℃/W ℃ ℃ Conditions IF=1mA VR=30V VR=1V,f=1MHZ 1 E,Mar,2015 Typical Characteristics FORWARD CURRENT I (mA) F Forward Characteristics 100 10 T =100℃ a 1 T =25℃ a 0.1 0.01 0.0 4 3 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 Capacitance Characteristics T =25℃ a f=1MHz 2 1 0 0 5 10 15 20 REVERSE VOLTAGE...