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RB751G-40 - Schottky barrier diode

Key Features

  • Small power mold type. (VMD2) 2) Low VF 3) High reliability.
  • Construction Silicon epitaxial planar 0.27±0.03 0.5±0.05 VMD2.
  • Structure ROHM : VMD2 dot (year week factory).
  • Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 4±0.1 2±0.05 φ0.5.
  • Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current.

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Datasheet Details

Part number RB751G-40
Manufacturer ROHM
File Size 0.95 MB
Description Schottky barrier diode
Datasheet download datasheet RB751G-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky barrier Diode RB751G-40 Applications General rectification Dimensions (Unit : mm) 0.6±0.05 0.13±0.03 Land size figure (Unit : mm) 0.5 1.0±0.05 1.4±0.05 0.5 1.2 Features 1) Small power mold type.(VMD2) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 0.27±0.03 0.5±0.05 VMD2 Structure ROHM : VMD2 dot (year week factory) Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 4±0.1 2±0.05 φ0.