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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCV27 TRANSISTOR (NPN)
SOT–23
FEATURES High Collector Current High Current Gain
MARKING:FF
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
10
IC Collector Current
500
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3.
BCV27 Datasheet
