SeCoS Halbleitertechnologie GmbH BCV27
NPN Darlington Plastic Encapsulated Transistor
| Part No. | BCV27 |
|---|---|
| Datasheet | BCV27 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Darlington Plastic Encapsulated Transistor |
| Buy | Stock & Price |
FEATURES
For general AF application high collector current High current gain Collector 3 1 Base 2 EmitterABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - Peak Collector Power Dissipation Thermal Resistance, Junction to Ambient Air Junction, Storage Temperature VCBO VCEO VEBO IC ICM PC RθJA TJ, TSTG 40 30 10 500 800 350 357 150, -65~150 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 UNIT V V V mA mA mW °C/W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100µA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 30...
