Infineon Technologies BCV27
NPN Silicon Darlington Transistors
MAXIMUM RATINGS
Parameter Collector-emitter voltage BCV27 BCV47 Symbol VCEO Value 30 60 Unit V Collector-base voltage BCV27 BCV47 VCBO Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB Peak base current Total power dissipationTS ≤ 74 °C IBM Ptot Junction temperature Tj Storage temperature Tstg 1Pb-containing package may be available upon special request 40 80 10 500 800 100 200 360 150 -65 ... 150 mA mW °C 1 2007-04-20 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance BCV