JCST BCV47
NPN Transistor
| Part No. | BCV47 |
|---|---|
| Datasheet | BCV47 Download |
| Manufacturer |  JCST |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High Collector Current● High Current Gain MARKING:FG
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 10 IC Collector Current 500 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 416 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTORELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 Collector cut-off current ICBO VCB=60V, IE=0 Emitter cut-off current IEBO VEB=4V, IC=0 hFE(1)
