NXP Semiconductors BCV47
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BCV47 |
|---|---|
| Datasheet | BCV47 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN Darlington transistors |
| Buy | Stock & Price |
FEATURES
● Medium current (max. 500 mA)● Low voltage (max. 60 V)
● High DC current gain (min. 20000).
APPLICATIONS
● Preamplifier input applications.DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. MARKING 1 2 BCV27; BCV47 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
handbook, halfpage 3 1 3 TR1 TR2 2 MAM298 TYPE NUMBER BCV27 BCV47 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) FF∗ FG∗ Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV27 BCV47 VCES collector-emitter voltage BCV27 BCV47 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − −...
