JCST BD439
NPN Transistor
FEATURES
Amplifier and switching applications TO-126MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BD439 BD441 60 80 V VCEO Collector-Emitter Voltage BD439 BD441 60 80 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature 5 4 1.25 150 -55-150 V A W ℃ ℃ 1. EMITTER 2. COLLECTOR 3. BASEELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) 123 Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test conditions IC=100μA,IE=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency (1)Pulse test VCEO(SUS)(1) IC=100mA,IB=0 V(BR)EBO ICBO IEBO hFE(1) (1)