The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2306 N-Channel 30-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S6
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (at TA=25℃ unless otherwise noted)
Parameter
Drain-Source voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃)a,b Pulsed Drain Current Continuous Source Current(Diode Conduction)a,b Maximum Power Dissipationa,b Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction and Storage Temperature Range
Notes : a. Surface Mounted on 1” ×1” FR4 board, t≤5s. b. Pulse width limited by maximum junction temperature.
Symbol
VDS VGS ID IDM IS PD RθJA TJ, Tstg
Value
30 ±20 3.16 20 0.62 0.
CJ2306 Datasheet
