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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2312 N-Channel 20-V(D-S) MOSFET
V(BR)DSS
20 V
RDS(on)MAX
31.8mΩ@4.5V 35.6mΩ@2.5V 41.4mΩ@1.8V
FEATURE z TrenchFET Power MOSFET
ID
5A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
APPLICATION z DC/DC Converters z Load Switching for Portable Applications
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
t=5s
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
t=5s
Thermal Resistance from Junction to Ambient
Operation Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD RθJA TJ,Tstg
Value 20 ±8.0 5 20 1.04 0.35 357
-50 ~+150
Unit V
A
W ℃/W
℃
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CJ2312 Datasheet
