CMPSH-3 Datasheet | JCST

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3 SCHOTTKY BARRIER DIODE SOT-23 Features - High Switching Speed - Low Forward Voltage MARKING: D95 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM Peak Repetitive Reverse Voltage IO Continuous Forward Current IFRM Peak Repetitive Forward Current IFSM Non-repetitive Peak Forward Current @ tp=10ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 100 350 750 350 286 125 -55~+150 Unit V m A m A m A m W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Reverse recovery time Symbol V(BR) IR Ctot trr Test conditions IR=100μA VR=25V IF=2m A IF=15m A IF=100m A VR=1V,f=1MHz IF= IR=10m A, Irr=0.1×IR, RL=100Ω Min Typ Max 30 0.5 0.33 0.45 1 7 5 Unit V μA V p F...