Rectron Semiconductor CMPSH-3
SCHOTTKY DIODE
FEATURES
* Power dissipation PD: 350 mW (Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OCMECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.ELECTRICAL CHARACTERISTICS
( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage (IR=100mA) Reverse voltage leakage current (VR=25V) Reverse voltage leakage current (VR=25V, TA= 100oC) Forward voltage (IF=2mA) Forward voltage (IF=15mA) Forward voltage (IF=100mA) SYMBOL V(BR) IR VF Diode capacitance (VR=0V, f=1MHz) Reverse recovery time (IF=IR=10mA, IRR=1.0mA, RL=100W) Ctot trr Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". SOT-23 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020...