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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA94 TRANSISTOR (PNP)
FEATURES High Voltage Driver Applications
SOT-223
1. BASE 2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-400
VCEO
Collector-Emitter Voltage
-400
VEBO
Emitter-Base Voltage
-5
IC Collector Current
-200
PC Collector Power Dissipation
1
RθJA
Thermal Resistance From Junction To Ambient
125
Tj Junction Temperature
150
Tstg Storage Temperature
-55~+150
Unit V V V mA W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=-0.