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WPM3401 Datasheet PDF

JESTEK WPM3401

The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Part No. WPM3401
Datasheet WPM3401 Download
Manufacturer
JESTEK
Description P-Channel Enhancement Mode MOSFET
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WPM3401 datasheet page 1 preview

DESCRIPTION

FEATURES

z z z z z -30V/-4.3A,RDS(ON)< 65mŸ@VGS=- 10V -30V/-3.4A,RDS(ON)< 90mŸ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design P−Channel MOSFET G 1 3 D S 2 Top View Application z z z z z Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch G 1 Gate Drain 3 WP1U 2 Source U = Date Code WP1 = Specific Device Code Order information Part Number WPM3401-3/TR Package SOT23 Shipping 3000 Tape&Reel Page 1 Free Datasheet Parameter WPM3401

ABSOLUTE MAXIMUM RATINGS

(TA=25 к! unless otherwise specified) Parameter Parameter VDS VGS ID IDM PD TJ Tstg RșJA Symbol l Drain-Source voltage Gate-Source Voltage Continuous Drain Steady-State TA=25ć Current Steady-State TA=70ć Pulse Drain Current Power Dissipation TA=25ć TA=70ć Operating Junction Temperature Range Storage Temperature Range Thermal Resistance-Junction to Ambient Value -30 ±20 -4.3 -3.4...
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