Datasheet4U Logo Datasheet4U.com

WPM3401 - P-Channel Enhancement Mode MOSFET

Description

The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • z z z z z -30V/-4.3A,RDS(ON)< 65mŸ@VGS=- 10V -30V/-3.4A,RDS(ON)< 90mŸ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design P.
  • Channel MOSFET G 1 3 D S 2 Top View.

📥 Download Datasheet

Datasheet Details

Part number WPM3401
Manufacturer JESTEK
File Size 199.93 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet WPM3401 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WPM3401 MOSFET WillSEMI
WPM3407 Single P-Channel Power MOSFET WillSEMI
WPM3410 Single P-Channel Power MOSFET WillSEMI
WPM3004 MOSFET WillSEMI
WPM3005 MOSFET WillSEMI

Other Datasheets by JESTEK

Part Number Description

Full PDF Text Transcription

Click to expand full text
WPM3401 WPM3401 P-Channel Enhancement Mode MOSFET http://www.jestek.com.cn Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Features z z z z z -30V/-4.3A,RDS(ON)< 65mŸ@VGS=- 10V -30V/-3.4A,RDS(ON)< 90mŸ@VGS=-4.
Published: |