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1SS270A - Silicon Epitaxial Planar Switching Diode

General Description

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Key Features

  • Low capacitance.
  • Short reverse recovery time.
  • High reliability.
  • High-speed switching 1SS270A Silicon Epitaxial Planar Switching Diode A B A C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter Reverse Voltage Average Forward Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise.

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Datasheet Details

Part number 1SS270A
Manufacturer JGD
File Size 141.12 KB
Description Silicon Epitaxial Planar Switching Diode
Datasheet download datasheet 1SS270A Datasheet

Full PDF Text Transcription (Reference)

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Features * Low capacitance * Short reverse recovery time * High reliability * High-speed switching 1SS270A Silicon Epitaxial Planar Switching Diode A B A C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter Reverse Voltage Average Forward Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 60 V Capacitance between Terminals at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-34 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.114 --- 2.90 C --- 0.018 --- 0.