1SS270A - SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE
SEMTECH
Key Features
Low capacitance. (C=3.0pF max. ).
Short reverse recovery time. (trr = 3.5ns max. ).
High reliability. Absolute Maximum Ratings (T a = 25OC)
Parameter
Symbol
Limits
Unit
Peak Reverse Voltage Reverse Voltage
VRM
70
V
VR
60
V
Peak Forward Current
I FM
450
mA
Average Forward Current
Io
150
mA
Non-Repetitive Peak Forward Surge Current (Note 1)
IFSM
1
A
Power Dissipation Junction Temperature Storage Temperature Range
Ptot
250
mW
Tj
175
OC
Ts
-.
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1SS270A
SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE
Features • Low capacitance. (C=3.0pF max.) • Short reverse recovery time. (trr = 3.5ns max.) • High reliability.
Absolute Maximum Ratings (T a = 25OC)
Parameter
Symbol
Limits
Unit
Peak Reverse Voltage Reverse Voltage
VRM
70
V
VR
60
V
Peak Forward Current
I FM
450
mA
Average Forward Current
Io
150
mA
Non-Repetitive Peak Forward Surge Current (Note 1)
IFSM
1
A
Power Dissipation Junction Temperature Storage Temperature Range
Ptot
250
mW
Tj
175
OC
Ts
-65 to +175
OC
Note 1 : Within 1s forward surge current.
Characteristics at T amb = 25 OC
Parameter Forward Voltage Reverse Current Capacitance Between Terminals Reverse Recovery Time
Symbol VF IR CT trr
Min. -
Typ. -
Max. 0.8 1.0 3.0 3.
1SS270A Datasheet
