FMMT4124 - NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS

Key Features

Power dissipation PCM 0.33W Tamb=25 Collector current ICM 0.2A Collector-base voltage V (BR) CBO 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 SOT 23 1. BASE 2.

FMMT4124 npn transistor by JIANGSU CHANGJIANG ELECTRONICS - Datasheet Preview

Datasheet Details

Part number	FMMT4124
Manufacturer	JIANGSU CHANGJIANG ELECTRONICS
File Size	397.28 KB
Description	NPN Transistor
Datasheet	FMMT4124 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FMMT4124	NPN Transistor	GME
FMMT4124	SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR	Zetex Semiconductors
FMMT4124	Switching Transistors	KEXIN
FMMT4124	SOT-23 BIPOLAR TRANSISTORS	Rectron
FMMT4124	NPN Transistor	Jin Yu Semiconductor

Other Datasheets by JIANGSU CHANGJIANG ELECTRONICS

Part Number	Description
FMMDT5451	TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR NPN FEATURES Power dissipation PCM 0.33W Tamb=25 Collector current ICM 0.2A Collector-base voltage V (BR) CBO 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 SOT 23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm ELECTRICAL CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10 A IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1m A IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 10 A IC=0 5 V Collector cut-off current ICBO VCB= 20 V , IE=0 0.05 A Emitter cut-off current IEBO VEB= 3V , IC=0 0.