Galaxy Century Microelectronics FMMT4124
NPN Transistor
FEATURES
● NPN Silicon Planar.● Switching Transistor. Pb Lead-free Production specification FMMT4124 ORDERING INFORMATION Type No. Marking FMMT4124 ZC SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 0.2 PC Collector Dissipation 330 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ C232 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor FMMT4124
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-of