2SB764 Datasheet | JIANGSU CHANGJIANG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors - 92L TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR 3. BASE Features z General Purpose Switching Application MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -1 750 167 150 -55~+150 Unit V V V A m W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE(1) h FE(2) VCE(sat) VBE (sat) Cob f T Test conditions Min -60 -50 -5 -1 -1 60 30 -0.7 -1.2 20 150 V V p F MHz 320 Typ Max Unit V V V μA μA IC=-10µA,IE=0 IC=-1m A,IB=0 IE=-10µA,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-2V, IC=-50m A VCE=-2V, IC=-1A IC=-500m A,IB=-50m A IC=-500m A,IB=-50m A VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-50m A CLASSIFICATION OF h FE(1) RANK RANGE D 60-120 E 100-200 F 160-320 A,Dec ,2010 Free Datasheet...