FEATURES
Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO unless otherwise specified) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency W Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200 F 160-320 J E E C E L VBE IEBO R T sat O Test conditions Ic=-10µA, IE=0 Ic=-1mA, IB=0 N IC C MIN O TYP 123 D T L , . MAX UNIT V V V -60 -50 -5 -1 -1 60 30 -0.7 -1.2 150 20 320 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 µA µA hFE(1) VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz hFE(2) VCE(sat) V V MHz pF fT Cob WEJ ELECTRONIC CO.
WEJ