Datasheet4U Logo Datasheet4U.com

JEB07D1F - Bi-directional TVS Diode

General Description

The JEBxxD1F series are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events.

Key Features

  • 3500W to 6500W Peak pulse power dissipation on 1.2/50μs-8/20μs@2Ω waveform.
  • For small surface mounted.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
JEB03DF TVS Diode Leiditech
JEB05DF TVS Diode Leiditech

Other Datasheets by JieJie Microelectronics

Part Number Description
JEB03CX TVS Diode Array
JEB03UCDS-A Bi-directional TVS Diode
JEB05D3 Bi-directional TVS Diode
JEB05DFB Bi-directional TVS Diode
JEB05ULCDS-A Bi-directional TVS Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JIEJIE MICROELECTRONICS CO. , Ltd JEBxxD1F Bi-directional TVS Diode Rev.0.4 DESCRIPTION:  The JEBxxD1F series are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. FEATURES  3500W to 6500W Peak pulse power dissipation on 1.