JEB15K4P Description
JIEJIE MICROELECTRONICS CO. , Ltd JEB15K4P TVS Diode Array Rev.1.1.
JEB15K4P Key Features
- 300 Watts peak pulse power per line (tP=8/20µs)
- Bi-directional protection
- Protects four I/O lines
- Low leakage current
- Low operating and clamping voltage
- Solid-state silicon avalanche technology
- RoHS pliant