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JEB15K4P - TVS Diode Array

Key Features

  • 300 Watts peak pulse power per line (tP=8/20µs).
  • Bi-directional protection.
  • Protects four I/O lines.
  • Low leakage current.
  • Low operating and clamping voltage.
  • Solid-state silicon avalanche technology.
  • RoHS compliant SOP-8 MAIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIEJIE MICROELECTRONICS CO. , Ltd JEB15K4P TVS Diode Array Rev.1.