JCS15N60H Datasheet | JILIN SINO-MICROELECTRONICS

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package ID 15 A VDSS 600 V Rdson（@Vgs=10V） 0.52 Ω Qg 36.0 nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 产品特性 z低栅极电荷 z低 Crss (典型值 23pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS 产品 Features zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product 订货信息 ORDER MESSAGE 订货型号 Order codes 印记 Marking JCS15N60CH-O-C-N-B JCS15N60FH-O-F-N-B JCS15N60CH-R-C-N-B JCS15N60FH-R-F-N-B JCS15N60CH JCS15N60FH JCS15N60CH JCS15N60FH 封装 Package TO-220C TO-220MF TO-220C...