JCS5N50T Description
R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS5N50T 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson （@Vgs=10V） Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 5A 500 V 1.6Ω 15 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.
JCS5N50T Key Features
- continuous
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 1.33 1.6