JCS5N60B Description
R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS5N60B 主要参数 MAIN CHARACTERISTICS 封装 Package R . 0 A ID = 600 V VDSS Rdson （@Vgs=10V） 2.4Ω 13.3nC Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.
JCS5N60B Key Features
- continuous
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 100 nA
- 1.7 2.4