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3DD1555A - CASE-RATED BIPOLAR TRANSISTOR

General Description

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Key Features

  • z 3DD1555A is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage plane type process, triple diffused process etc, adoption of fully plastic packge. RoHS product. ORDER.

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Datasheet Details

Part number 3DD1555A
Manufacturer JILIN SINO
File Size 142.46 KB
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet download datasheet 3DD1555A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY R 3DD1555A MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 8A 3 V(max) 0.6 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. z3DD1555A RoHS NPN , FEATURES z 3DD1555A is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage plane type process, triple diffused process etc, adoption of fully plastic packge. RoHS product. ORDER MESSAGE 123 EQUIVALENT CIRCUIT RBE=50 (Typ.) Order codes Marking 3DD1555A-O-A-N-D D1555A MARKING Halogen Free Package NO TO-3P(H)IS Packaging Foam Device Weight 5.50 g(typ) Trademark Part No.