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3DD1555P - CASE-RATED BIPOLAR TRANSISTOR

General Description

of Changes ：201412A 5/5

Key Features

  • 3DD1555PNPN.
  • 3DD1555P is high breakdown ， ： 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc. , adoption of （RoHS）。 fully plastic packge. RoHS product.

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Datasheet Details

Part number 3DD1555P
Manufacturer JILIN SINO
File Size 209.94 KB
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet download datasheet 3DD1555P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 5A 3 V(max) 1 μs(max) ● APPLICATIONS ● Horizontal deflection output for color TV. 1 23 FEATURES ●3DD1555PNPN ● 3DD1555P is high breakdown ， ： 、, 。 voltage of NPN bipolar transistor. The main process of manufacture: high voltage planar process, triple diffused process etc., adoption of （RoHS）。 fully plastic packge. RoHS product.