JCS10N80C Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS10N80C 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson(Vgs=10V) Qg 10A 800 V 1.0Ω (Max) 71.6nC( Typ.) 用途 开关电源 电子镇流器 APPLICATIONS Switched mode power suppliesy Electronic ballast 产品特性 低栅极电荷 低 Crss (典型值 8.6pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS10N80C Key Features
- Low gate charge -Low Crss (typical 8.6pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produ
- Derate
- 55~+150
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 0.7 1.0 Ω
- 3180 3700 pF