JCS11N90T Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS11N90T 主要参数 MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC 封装 Package 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplie 产品特性 低栅极电荷 低Crss (典型值 22pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS11N90T Key Features
- Low gate charge -Low Crss (typical 22pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produc
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 100 nA
- 100 nA
- 0.9 1.10 Ω
- 1.58 1.98 Ω
- 2.34 2.90 Ω
