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MG065R060 - N-CHANNEL Enhancement Silicon Carbide MOSFET

Key Features

  • High Blocking Voltage.
  • Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • RoHS product TO-247 TO-247-4L ORDER.

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Datasheet Details

Part number MG065R060
Manufacturer JILIN SINO
File Size 846.45 KB
Description N-CHANNEL Enhancement Silicon Carbide MOSFET
Datasheet download datasheet MG065R060 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG065R060 MAIN CHARACTERISTICS Package ID VCE Rdson-typ （@Vgs=20V） Qg-typ 30A 650V 65MΩ 65nC ⚫ ⚫ ⚫ DC/DC ⚫ ⚫ ⚫ APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Pulsed Power applications ⚫ ⚫ ⚫ ⚫ ⚫ ⚫RoHS FEATURES ⚫High Blocking Voltage ⚫Low On-Resistance ⚫High Speed Switching with Low Capacitances ⚫Easy to Parallel and Simple to Drive ⚫Avalanche Ruggedness ⚫RoHS product TO-247 TO-247-4L ORDER MESSAGE Order codes - Halogen-Free-Tube MG065R060-GH-BR MG065R060-GE-BR ：202403B Marking MG065R060 MG065R060 Package TO-247-4L TO-247 1/9 R ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage D