• Part: MG065R060
  • Description: N-CHANNEL Enhancement Silicon Carbide MOSFET
  • Manufacturer: JILIN SINO
  • Size: 846.45 KB
Download MG065R060 Datasheet PDF
JILIN SINO
MG065R060
MG065R060 is N-CHANNEL Enhancement Silicon Carbide MOSFET manufactured by JILIN SINO.
N 沟道增强型碳化硅场效应晶体管 N-CHANNEL Enhancement Silicon Carbide MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package ID VCE Rdson-typ (@Vgs=20V) Qg-typ 30A 650V 65MΩ 65nC 用途 - 光伏逆变器 - 开关模式电源 - 高压 DC/DC 转换器 - 电池充电器 - 电动驱动 - 脉冲电源应用 APPLICATIONS - Solar Inverters - Switch Mode Power Supplies - High Voltage DC/DC Converters - Battery Chargers - Motor Drives - Pulsed Power applications 产品特性 - 高阻断电压 - 低导通电阻 - 低电容高速开关 - 易于驱动 - 雪崩强度高 - RoHS 产品 Features - High Blocking Voltage - Low...