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MG065R060 Datasheet N-channel Enhancement Silicon Carbide MOSFET

Manufacturer: JILIN SINO

Overview: N 沟道增强型碳化硅场效应晶体管 N-CHANNEL Enhancement Silicon Carbide MOSFET R MG065R060 主要参数 MAIN CHARACTERISTICS 封装 Package ID VCE Rdson-typ (@Vgs=20V) Qg-typ 30A 650V 65MΩ 65nC 用途 ⚫ 光伏逆变器 ⚫ 开关模式电源 ⚫高压 DC/DC 转换器 ⚫ 电池充电器 ⚫ 电动驱动 ⚫.

Datasheet Details

Part number MG065R060
Manufacturer JILIN SINO
File Size 846.45 KB
Description N-CHANNEL Enhancement Silicon Carbide MOSFET
Datasheet MG065R060-JILINSINO.pdf

Key Features

  • High Blocking Voltage.
  • Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • RoHS product TO-247 TO-247-4L 订货信息 ORDER.

MG065R060 Distributor