• Part: MG120R040
  • Description: N-CHANNEL Enhancement Silicon Carbide MOSFET
  • Category: MOSFET
  • Manufacturer: JILIN SINO
  • Size: 813.12 KB
Download MG120R040 Datasheet PDF
JILIN SINO
MG120R040
MG120R040 is N-CHANNEL Enhancement Silicon Carbide MOSFET manufactured by JILIN SINO.
FEATURES - High Blocking Voltage - Low On-Resistance - High Speed Switching with Low Capacitances - Easy to Parallel and Simple to Drive - Avalanche Ruggedness - Ro HS product TO-247 TO-247-4L 订货信息 ORDER MESSAGE 订 货 型 号 Order codes 无卤-条管 Halogen-Free-Tube MG120R040-GE-BR MG120R040-GH-BR 版本:202405D 印记 Marking MG120R040 MG120R040 封装 Package TO-247 TO-247-4L 1/9 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 项目 Parameter 最高漏极-源极直流电压 Drain-Source Voltage 最高栅源电压 Gate-Source Voltage 工作栅源电压 Gate-Source Voltage 连续漏极电流 Drain Current -continuous 最大脉冲漏极电流 Drain Current - pulse 耗散功率 Power Dissipation 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes 符号 Symbol VDSmax VGSmax VGSop ID IDM PD TJ,TSTG 数值 Value 1200 -8/+20 -5/+18 60 40 100 312 -55~+175 单位 Unit V V V A A A W ℃ ℃ 测试条件 Tests conditions VGS=0V,ID=100μA Absolute maximum values Remended operational values VGS=20V, TC=25˚C VGS=20V, TC=100˚C Pulse width limited by Tjmax TC=25˚C, TJ=175˚C 版本:202405D 2/9...