MG120R040
MG120R040 is N-CHANNEL Enhancement Silicon Carbide MOSFET manufactured by JILIN SINO.
FEATURES
- High Blocking Voltage
- Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Ro HS product
TO-247
TO-247-4L
订货信息 ORDER MESSAGE
订 货 型 号 Order codes
无卤-条管 Halogen-Free-Tube MG120R040-GE-BR MG120R040-GH-BR
版本:202405D
印记 Marking
MG120R040 MG120R040
封装 Package
TO-247 TO-247-4L
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绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
项目 Parameter 最高漏极-源极直流电压 Drain-Source Voltage 最高栅源电压 Gate-Source Voltage 工作栅源电压 Gate-Source Voltage 连续漏极电流 Drain Current -continuous 最大脉冲漏极电流 Drain Current
- pulse 耗散功率 Power Dissipation 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes
符号 Symbol VDSmax VGSmax VGSop ID IDM PD
TJ,TSTG
数值 Value 1200 -8/+20 -5/+18
60 40 100 312
-55~+175
单位 Unit
V V V A A A W
℃
℃
测试条件 Tests conditions VGS=0V,ID=100μA Absolute maximum values
Remended operational values
VGS=20V, TC=25˚C VGS=20V, TC=100˚C Pulse width limited by Tjmax
TC=25˚C, TJ=175˚C
版本:202405D
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