Datasheet4U Logo Datasheet4U.com

MG120R080 - N-CHANNEL Enhancement Silicon Carbide MOSFET

Key Features

  • High Blocking Voltage.
  • Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • RoHS product TO-247 TO-247-4L ORDER.

📥 Download Datasheet

Datasheet Details

Part number MG120R080
Manufacturer JILIN SINO
File Size 785.61 KB
Description N-CHANNEL Enhancement Silicon Carbide MOSFET
Datasheet download datasheet MG120R080 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT Toshiba
MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT Toshiba
MG12032-01 LCD BONA
MG120V2YS40 N-Channel IGBT Toshiba
MG12200D-BN2MM IGBT Littelfuse

Other Datasheets by JILIN SINO

Part Number Description
MG120R040 N-CHANNEL Enhancement Silicon Carbide MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG120R080 MAIN CHARACTERISTICS Package ID VCE Rdson-typ （@Vgs=18V） Qg-typ 28A 1200V 80MΩ 85nC ⚫ ⚫ ⚫ DC/DC ⚫ ⚫ ⚫ APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Pulsed Power applications ⚫ ⚫ ⚫ ⚫ ⚫ ⚫RoHS FEATURES ⚫High Blocking Voltage ⚫Low On-Resistance ⚫High Speed Switching with Low Capacitances ⚫Easy to Parallel and Simple to Drive ⚫Avalanche Ruggedness ⚫RoHS product TO-247 TO-247-4L ORDER MESSAGE Order codes - Halogen-Free-Tube MG120R080-GE-BR MG120R080-GH-BR ：202404A Marking MG120R080 MG120R080 Package TO-247 TO-247-4L 1/9 R ABSOLUTE RATINGS (Tc=25℃) Parameter － Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage