2N60
Key Features
- RDS(ON)<4.4Ω @ VGS=10V,ID=1A
- Fast switching capability
- Lead free in pliance with EU RoHS directive.
- Improved dv/dt capability,high ruggedness
- Part: 2N60
- Description: 600V N-Channel Power MOSFET
- Category: MOSFET
- Manufacturer: JINAN JINGHENG
- Size: 159.42 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6069 | Digitron Semiconductors | SENSITIVE GATE TRIACS |
| 2N60FS | PINGWEI | N-Channel Super Junction Power MOSFET |
| 2N60S | SemiHow | N-Channel MOSFET |
| 2N6090 | Semiconductor Technology | Silicon Dual Differential Amplifier Transistors |
| 2N6091 | Semiconductor Technology | Silicon Dual Differential Amplifier Transistors |
| 2N6083 | Microsemi | RF & MICROWAVE TRANSISTORS |
| 2N6085 | Semiconductor Technology | Silicon Dual Differential Amplifier Transistors |
| 2N6082 | SSM | VHF Communications Transistor |
| 2N6083 | SSM | VHF Communications Transistor |
| 2N6009 | Sprague | Series 2N Transistors |