2N60 Key Features
- RDS(ON)<4.4Ω @ VGS=10V,ID=1A
- Fast switching capability
- Lead free in pliance with EU RoHS directive
- Improved dv/dt capability,high ruggedness
- Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package
| Manufacturer | Part Number | Description |
|---|---|---|
| ROUM ROUM |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET |
HAOHAI |
2N60 | N-Channel MOSFET |
Inchange Semiconductor |
2N60 | TO-251 N-Channel MOSFET |
Unisonic Technologies |
2N60 | N-CHANNEL MOSFET |
Nell Power Semiconductor |
2N60 | N-Channel Power MOSFET |